NaMLab

01/06/2026

Achieving a Dielectric Constant of 60 in ZrxHf1−xO2:

A Candidate for DRAM?

https://ieeexplore.ieee.org/document/11532794

27/05/2026

Congrats to Uwe and Eilam!

https://newsroom.intel.com/corporate/intels-2025-outstanding-researcher-awards-honor-10-academic-innovators

Uwe Schroeder / NamLab gGmbH & Eilam Yalon / Technion – Israel Institute of Technology

Understanding and controlling the growth and properties of ferroelectric HZO-based device stacks

Enhancing hafnia-based ferroelectric devices requires more profound understanding of fabrication processes, defect properties, and switching phenomena at the atomic dimension. This research center established complete insight into strain mechanics, defect formation, and electrode templating for preserving ferroelectric phases and directing polarization switching in GHz operating conditions. These breakthroughs boosted reliability by allowing optimized ferroelectric device configurations for varied high-frequency applications.

Recognizing breakthrough university research advancing the future of technology through deep academic collaboration.

23/05/2026

Impact of ALD Oxidant and Deposition Temperature on Electrical Characteristics of Al2O3/SiO2/SiC MOS-Capacitors

https://www.scientific.net/MSF.1192.21

19/05/2026

Wire resistance impact and compensation methods in analog switching 1R memristive crossbar array

https://www.sciencedirect.com/science/article/pii/S0038110126000511

12/05/2026

Diffusion of contact metals in GaN/AlGaN stacks

https://pubs.aip.org/aip/jap/article/139/18/185707/3391118/Diffusion-of-contact-metals-in-GaN-AlGaN-stacks

12/05/2026

Overcoming the thickness scaling limit in hafnium-based ferroelectrics via interfacial strain and conductivity engineering

https://www.sciopen.com/article/10.26599/NR.2026.94908815

08/05/2026

Variability and Retention Investigation for Ferroelectric FET with Pseudo-MFMIS Structure

https://ieeexplore.ieee.org/document/11499166

16/04/2026

Efficient In-Hardware Matrix–Vector Multiplication and Addition Exploiting Bilinearity of Schottky Barrier Transistors Processed on Industrial FDSOI

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500864?utm_medium=article&utm_source=researchgate.net

24/03/2026

A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500782

24/03/2026

Model-Based Time-Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500777